Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System |
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Authors: | Jae-Seong Jeong Jae-Hyun Lee Jong-Shin Ha Sang-Deuk Park |
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Affiliation: | aAdvanced Technology Group, CS Management Center;bBcN Access Group, IT R&D center, Samsung Electronics CO., LTD, 416, Maetan-3Dong, Yeoungtong-Gu, Suwon City, Gyeonggi-Do, Korea |
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Abstract: | In this paper, we have verified stress root caused by lightning surge in High voltage BJT based line driver of ADSL telecommunication and created failure mechanism. To reproduce damages in Line driver, we have applied STD surge waveform in operating condition, which is specified in IEC-6000-4-5, to component and board level. Visual isolation for Damage root was conducted with Real-time Electrical Stress Analysis (RTESA) utilizing Photon Emission Microscopy (PEM). The surge made with input of Tx output created junction breakdown of amplifier, which is made of HVBJT cells, and also caused current crowding from Vcc (supply voltage). In case of Positive pulse, current crowding was observed from between Collector and Vcc (+)12V. For negative pulse, at between Emitter and Vee (−)12V, current crowding was found. For both cases, device damage level was the same. All of these could be considered as transient latchup phenomenon created in BJT cell. Applying temporary clamping diode to line driver Tx, we have conducted Board level surge injection test. As a result, with the correlation between surge level from component level reproduction test and the one from system level, we have decided field lightning surge damage level and set up line driver protection margin. |
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