Properties of conducting zinc oxide films prepared by R.F. Sputtering

An effective method of dopant incorporation in rf sputtered ZnO film is reported. The electrical, optical and structural properties of zinc doped ZnO films are investigated. Electron mobility of∼10 cm² /V-sec and electron concentration of∼10¹⁹ cm⁻³ have been measured at room temperature. X-ray diffraction data obtained on films prepared on Corning 7059 glass show (002) peak, dominating. The high electrical conductivity and transmission makes ZnO films very attractive as a component for heterojunction solar cells.