| 多孔硅发光机制的分析 |
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| 引用本文： | 汪开源,唐洁影.多孔硅发光机制的分析[J].固体电子学研究与进展,1994,14(4):317-322. |
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| 作者姓名： | 汪开源 唐洁影 |
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| 作者单位： | 东南大学电子工程系 |
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| 摘 要： | 从量子力学的基本理论出发讨论了量子限制效应，推导出多孔硅有效禁带宽度增量并用量子限制效应和表面态及其物质在发光中作用的理论解释了ＰＳ光致发光的实验现象。
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| 关 键 词： | 多孔硅，光致发光，量子限制效应 |
The Analysis of PS Luminous Mechanics |
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| Wang Kaiyuan, Tang Jieying.The Analysis of PS Luminous Mechanics[J].Research & Progress of Solid State Electronics,1994,14(4):317-322. |
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| Authors: | Wang Kaiyuan Tang Jieying |
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| Abstract: | In this paper, from quantum mechanics basic theory, we have drawnout that the effective bandgap increment of porous silicon (PS) is Photoluminescene (PL) phenomena of the PS have also been explained according to quantum confinement effect (QCE) and effect of surface state. |
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| Keywords: | Porous Silicon (PS) Photoluminescene (PL) Quantum Confinement Effect (QCE) |
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