A CMOS image sensor with a double-junction active pixel |
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| Authors: | Findlater K.M. Renshaw D. Hurwitz J.E.D. Henderson R.K. Purcell M.D. Smith S.G. Bailey T.E.R. |
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| Affiliation: | STMicroelectron. Imaging Div., Edinburgh, UK; |
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| Abstract: | ![]()
A CMOS image sensor that employs a vertically integrated double-junction photodiode structure is presented. This allows color imaging with only two filters. The sensor uses a 184*154 (near-QCIF) 6-transistor pixel array at a 9.6-/spl mu/m pitch implemented in 0.35-/spl mu/m technology. Results of the device characterization are presented. The imaging performance of an integrated two-filter color sensor is also projected, using measurements and software processing of subsampled images from the monochrome sensor with two color filters. |
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