GaAs power m.e.s.f.e.t.s. with a graded recess structure |
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| Authors: | Furutsuka Takashi Higashisaka Asamitsu Aono Yoichi Takayama Yoichiro Hasegawa Fumio |
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| Affiliation: | Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan; |
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| Abstract: | A new recess structure device was developed to improve the field distrubution and therfore the performance of GaAs power m.e.s.f.e.t.s. The linear gain and the output power were improved by 1?2 dB for this structure. The highest output powers obtained are 15 W with 4 dB associated gain at 6 GHz, and 4.3 W with 3 dB associated gain at 11 GHz. |
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