Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells |
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| Authors: | S.K. Ray K.M. Groom M.D. Beattie H.Y. Liu M. Hopkinson R.A. Hogg |
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| Affiliation: | Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK; |
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| Abstract: | ![]()
We propose and demonstrate a technique for tailoring the emission bandwidth of /spl sim/1.3 /spl mu/m quantum dot superluminescent light-emitting diodes. A broadening of the emission is achieved by incorporating the InAs quantum dot layers in InGaAs quantum wells of different indium compositions. These structures exhibit a broader and flatter emission compared to a simple dot-in well structure comprised of wells of identical indium composition. |
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