A method for locating the position of oxide traps responsible forrandom telegraph signals in submicron MOSFETs |
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| Authors: | Celik-Butler Z. Vasina P. Vibhavie Amarasinghe N. |
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| Affiliation: | Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX; |
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| Abstract: | Random telegraph signals (RTS) have been measured in the drain to source voltage of W×L=0.97×0.15 μm2 medium-doped drain (MDD) n-MOSFET's. The depth of the trapping center in the oxide is found from the gate voltage dependence of the emission and capture times. The difference in the drain voltage dependence of the capture and emission times between the forward and reverse modes is utilized to find the position of the trap in the channel with respect to the source |
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