Influence of Iodine Vapour Pressure on Formation of XeI^* in Xe/I2 Mixture |
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引用本文: | 区琼荣,孟月东,舒兴胜,钟少锋,尤庆亮.Influence of Iodine Vapour Pressure on Formation of XeI^* in Xe/I2 Mixture[J].等离子体科学和技术,2006,8(3):333-336. |
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作者姓名: | 区琼荣 孟月东 舒兴胜 钟少锋 尤庆亮 |
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作者单位: | Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China |
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摘 要: | The influence of the iodine vapour pressure on the mechanisms of XeI^* formation is investigated in Xe/I2 mixture by dielectric barrier discharge. The iodine vapour pressure is measured as a function of the ultraviolet (UV) intensity of XeI^* emission at 253 nm, and found that the UV intensity reaches a maximum at 0.9 Torr of iodine at a xenon pressure of 300 Torr, then decreases slowly with the iodine pressure larger than 0.9 Torr. The discharge mode transforms from a hybrid discharge at a xenon pressure of 760 Torr with 1.0 Torr of iodine to a diffuse mode at 10 Torr of iodine. These results are quite different from those of other rare-gas halogen excimers and indicate a different mechanism of XeI^* formation from those of other rare-gas halogen excimers.
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关 键 词: | XeI受激子 紫外发射 电介质势能放电 等离子体 |
收稿时间: | 2005-03-23 |
修稿时间: | 2005-03-23 |
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