Transient electroluminescence in multilayer organic light-emitting diodes: experiment and theory |
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| Affiliation: | 1. Institute of Physical, Macromolecular and Nuclear Chemistry, Philipps University, D-35032 Marburg, Germany;2. Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow 115409, Russia;3. Bayer AG, Central Research, D-47829 Krefeld, Germany;1. École Polytechnique Fédérale de Lausanne, Switzerland;2. University of Oulu, Finland;1. Photovoltaic Laboratory, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon, 34129, South Korea;2. Department Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, 1-Gwanak-ro, Gwanak-gu, Seoul, 08826, South Korea;3. School of Mechanical and Aerospace Engineering, Seoul National University, 1-Gwanak-ro, Gwanak-gu, Seoul, 08826, South Korea;4. Global Frontier Center for Multiscale Energy Systems, Seoul National University, Seoul 08826, South Korea;1. School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;2. Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong Special Administrative Region, China;3. Nano-organic Photoelectronic Laboratory and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China;1. School of Physics and Optoelectronic Engineering, Xidian University, Xi''an, 710071, People''s Republic of China;2. Key Laboratory of Photonics Technology for Information, Department of Electronic Science and Technology, School of Electronic and Information Engineering, Xi''an Jiaotong University, Xi''an, 710049, People''s Republic of China;3. Department of Chemistry, School of Science, Xi''an Jiaotong University, Xi''an, 710049, People''s Republic of China |
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| Abstract: | We have investigated a multilayer organic light-emitting diode (OLED) with 1,3,5-tris(N,N-bis-(4,5-methoxy-phenyl)-aminophenyl)-benzene (TAPB) acting as hole transporting layer (HTL) and tris(8-hydroxy-quinolinolato) aluminium (Alq3) as electron transporting layer (ETL). Positive charge carriers in the HTL were detected optically as a function of the applied bias. Furthermore, we investigated the DC-characteristics of current and brightness as well as the onset behaviour of the electroluminescence (EL) as a function of the applied bias. An analytical model is developed to describe the observed carrier concentrations as well as the current–voltage characteristics and the transient EL measurements quantitatively. |
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