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Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy
作者姓名:LI  Cheng  LAI  Hong-kai  CHEN  Song-yan
作者单位:Research Center for Semieond. Photon. , Dept. of Phys., Xiamen University, Xiamen 361005, CHN
基金项目:Fujian Creative Projects for Young Scientific Researchers(2004J021).
摘    要:Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0. 90 eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.

关 键 词:光致发光  分子束  取向附生  光谱学  硅元素层  掺杂
文章编号:1007-0206(2005)04-0225-03
收稿时间:2005-06-14
修稿时间:2005-07-04

Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy
LI Cheng LAI Hong-kai CHEN Song-yan.Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy[J].Semiconductor Photonics and Technology,2005,11(4):225-227.
Authors:LI Cheng  LAI Hong-kai  CHEN Song-yan
Abstract:Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.
Keywords:Photoluminescence  Boron-doped silicon layer  Dislocations
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