| Zn_(1-x)Cd_xSe/ZnS量子阱材料的共振遂穿特性研究 |
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| 引用本文： | 安盼龙,许丽萍,温银萍.Zn_(1-x)Cd_xSe/ZnS量子阱材料的共振遂穿特性研究[J].红外,2009,30(3):35-38. |
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| 作者姓名： | 安盼龙 许丽萍 温银萍 |
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| 作者单位： | 1. 中北大学理学院物理系,太原,山西,030051
2. 中北大学微米纳米技术研究中心,太原,山西,030051 |
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| 摘 要： | 本文通过对共振隧穿电流密度随外加偏压及应力而变的依赖关系的理论研究,模拟了Zn1-xCdxSe/ZnS共振隧穿电流密度随外加偏压及应力的变化曲线.给出了等效电阻系数随外加偏压及应力而变的依赖关系,得出了介观压阻系数与外应力的变化符合线性关系的结论.这些结论为将机械信号转换为电学信号的介观效应器件的设计提供了理论指导.
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| 关 键 词： | 介观压阻系数 应力 共振隧穿电流 偏压 |
| 收稿时间： | 2008/10/29 |
Study of Resonant Tunneling Effects in Zn_(1-x)Cd_xSe/ZnS Quantum Well |
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| AN Pan-long,XU Li-ping,WEN Yin-ping.Study of Resonant Tunneling Effects in Zn_(1-x)Cd_xSe/ZnS Quantum Well[J].Infrared,2009,30(3):35-38. |
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| Authors: | AN Pan-long XU Li-ping WEN Yin-ping |
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| Affiliation: | 1.Department of Physics;School of Science;North University of China;Taiyuan 030051;China;2.Micro and Nano Technology Research Center;China |
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| Abstract: | The dependence of resonant tunneling current density on the applied bias voltage and strain is studied in theory.The curves of the resonant tunneling current density in Zn_(1-x)Cd_xSe/ZnS varied with the applied bias voltage and strain are simulated.The dependence of the equivalent resistance coefficient on the applied bias voltage and strain is given.A conclusion that the variation of the mesopiezo-resistance coefficient with the strain agree with a linear relationship is obtained.This conclusion is of the... |
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| Keywords: | meso-piezo-resistance coefficient strain resonant tunneling current bias voltage |
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