Solid phase crystallization of amorphous silicon on glass by thin film heater for thin film transistor (TFT) application |
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| Authors: | Byoung Dong KimHunjoon Jung Gi-Bum KimSeung-Ki Joo |
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| Affiliation: | School of Materials Science and Engineering, Seoul National University, Gwanwak, Shinrimdond, Seoul 151-744, South Korea |
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| Abstract: | A new process for solid phase crystallization (SPC) of amorphous silicon (a-Si) using thin film heater is reported. With this localized Ti silicide thin film heater, we successfully crystallized 500 Å-thick a-Si in a few minutes without any thermal deformation of glass substrate. The size of crystallized silicon grain was abnormally big (30-40 μm). Polycrystalline thin film transistors (TFT) fabricated using this unique thin film heater showed better mobility than those of conventional ones by furnace annealing. |
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| Keywords: | 81 05Gc |
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