Forward transient characteristics of gold-doped silicon p+-n-n+diodes

The transient response of high-resistivity long-base low-lifetime p⁺-n-n⁺silicon diodes was examined experimentally. The diodes were doped with gold in order to reduce the minority carrier lifetime. Voltage oscillations were observed at different current levels. A large inductive effect was shown to exist when the diode was forward biased in a negative resistance region of the dc voltage-current characteristics.