|
|||||
|
|
| (8, 0)碳纳米管/碳化硅纳米管异质结输运特性的研究 | |
| 引用本文： | 刘红霞,张鹤鸣,张志勇. (8, 0)碳纳米管/碳化硅纳米管异质结输运特性的研究[J]. 半导体学报, 2009, 30(5): 052002-4 |
| 作者姓名： | 刘红霞 张鹤鸣 张志勇 |
| 作者单位： | Laboratory;Ministry;Education;Wide;Band-Gap;Semiconductor;Materials;Devices;School;Microelectronics;Xidian;University;Institute;Information;Science;Technology;Northwest; |
| 基金项目： | supported by the Pre-Research Foundation from the National Ministries and Commissions(No.51308040203) |
| 摘 要： | A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining nonequilibrium Green＇s function （NEGF） with density functional theory （DFF）, the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital （HOMO） has a higher electron density on the CNT section and the lowest unoccupied molecular orbital （LUMO） mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are ＋1.8 and -2.2 V, respectively. |
| 关 键 词： | 电子输运性质 硅纳米管 异质结 碳化 分子轨道 密度泛函理论 碳纳米管 探针系统 |
| 收稿时间： | 2008-11-09 |
Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction |
|
| Liu Hongxi,Zhang Heming and Zhang Zhiyong. Electronic transport properties of an (8, 0) carbon/silicon-carbide nanotube heterojunction[J]. Chinese Journal of Semiconductors, 2009, 30(5): 052002-4 | |
| Authors: | Liu Hongxi Zhang Heming Zhang Zhiyong |
| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;Institute of Information Science and Technology, Northwest University, Xi'an 710069, China |
| Abstract: | A two-probe system of the heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) was established based on its optimized structure. By using a method combining nonequilibrium Green's function (NEGF) with density functional theory (DFT), the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital (HOMO) has a higher electron density on the CNT section and the lowest unoccupied molecular orbital (LUMO) mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are +1.8 and -2.2 V, respectively. |
| Keywords: | carbon/silicon carbide nanotube heterojunction nonequilibrium Green's function transport properties |
| 本文献已被 CNKI 维普 等数据库收录！ | |
| 点击此处可从《半导体学报》浏览原始摘要信息 | |
| 点击此处可从《半导体学报》下载全文 | |