High Power,Room Temperature Terahertz Emitters Based on Dopant Transitions in 6H-Silicon Carbide |
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| Authors: | James Kolodzey, Guang-Chi Xuan, Peng-Cheng Lv, Nathan Sustersic, Xin Ma |
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| Affiliation: | [1] Applied Materials Inc., Santa Clara, CA 95054, USA; [2] AlphaSense, Inc., Wilmington, DE 19809, USA; [3] Intel Corporation, Hillsboro, 0R 97214, USA; [4]Electrical & Computer Engineering Department, University of Delaware, Newark, DE 19716, USA; [5]Electrical & Computer Engineering Department,University of-Delaware, Newark, DE 19716, USA (Corresponding authore-mail:kolodzey@udel.edu). |
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