Performance of selenium-ion-implanted GaAs f.e.t.s |
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| Authors: | Higgins J.A. Welch B.M. Eisen F.H. Robinson G.D. |
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| Affiliation: | Rockwell International, Science Center, Thousand Oaks, USA; |
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| Abstract: | Selenium-ion-implanted GaAs f.e.t.s have given minimum noise figures as low as 3·4 dB and maximum available gains of at least 10 dB at 10 GHz. The devices do not appear to suffer from short-term drift problems, and have greater device-characteristic uniformity and reproducibility than epitaxial f.e.t.s. |
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