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| RTD/HEMT单片集成中RTD直流参数与材料结构的关系 | |
| 引用本文： | 郭维廉,牛萍娟,苗长云,于欣,王伟,商跃辉,冯震,田国平. RTD/HEMT单片集成中RTD直流参数与材料结构的关系[J]. 固体电子学研究与进展, 2008, 28(2): 167-171 |
| 作者姓名： | 郭维廉 牛萍娟 苗长云 于欣 王伟 商跃辉 冯震 田国平 |
| 作者单位： | 天津工业大学信息与通信工程学院,天津,300160;中国电子科技集团公司十三所,石家庄,050051;天津工业大学信息与通信工程学院,天津,300160;中国电子科技集团公司十三所,石家庄,050051 |
| 基金项目： | 国家自然科学基金 , 超高速专用集成电路重点实验室基金 |
| 摘 要： | 为了研究器件参数与材料结构的关系,设计了三种不同的GaAs基RTD材料结构。通过完全相同的器件制造工艺,研制出三种RTD器件,并测量了它们的9个直流参数。对测量结果进行了对比和分析。最后针对RTD与HEMT集成时,如何处理RTD与HEMT间的电流匹配问题提出了建议。 |
| 关 键 词： | 共振隧穿二极管 材料结构 器件参数 |
The Correlation between D.C.Parameters of RTD and It's Material Structures in the RTD/HEMT Monolithic Integration |
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| GUO Weilian,NIU Pingjuan,MIAO Changyun,YU Xin,WANG Wei,SHANG Yuehui,FENG Zhen,TIAN Guoping. The Correlation between D.C.Parameters of RTD and It's Material Structures in the RTD/HEMT Monolithic Integration[J]. Research & Progress of Solid State Electronics, 2008, 28(2): 167-171 | |
| Authors: | GUO Weilian NIU Pingjuan MIAO Changyun YU Xin WANG Wei SHANG Yuehui FENG Zhen TIAN Guoping |
| Affiliation: | GUO Weilian1,2 NIU Pingjuan1 MIAO Changyun1 YU Xin1 WANG Wei1SHANG Yuehui2 FENG Zhen2 TIAN Guoping2(1 School of Information , Communication Eng.Tianjin Polytechnic University,Tianjin,300160,CHN)(2 13th Institution of CETC,Shijiazhuang,050051,CHN) |
| Abstract: | In order to study the correlation between device D.C.parameters and material structures,three kinds of GaAs based RTD material structures have been designed.By all the same device processing,three kinds of RTD have been fabricated from the three material structures,and the 9 D.C.parameters of them have been measured.The measured results have been compared and analyzed.Finally,the suggestion on how to treat the current matching between RTD and HEMT in the RTD/HEMT integration has been given. |
| Keywords: | RTD material structure device parameters |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |