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| 多晶硅纳米薄膜电学特性的实验研究 | |
| 引用本文： | 刘晓为,李金锋,揣荣岩,施长治,陆学斌,吴娅静. 多晶硅纳米薄膜电学特性的实验研究[J]. 传感器与微系统, 2008, 27(8) |
| 作者姓名： | 刘晓为 李金锋 揣荣岩 施长治 陆学斌 吴娅静 |
| 作者单位： | 1. 哈尔滨工业大学,MEMS中心,黑龙江,哈尔滨,150001 2. 哈尔滨工业大学,MEMS中心,黑龙江,哈尔滨,150001;沈阳工业大学,信息科学与工程学院,辽宁,沈阳,110023 |
| 摘 要： | 用低压化学气相淀积(LPCVD)法淀积了膜厚为60～250nm的多晶硅纳米薄膜,研究了膜厚和掺杂浓度对多晶硅纳米薄膜电学特性的影响。结合扫描电镜(SEM)图片,在电阻率与电阻率温度系数测试结果的基础上,分析了膜厚和掺杂浓度对薄膜电学特性的影响。结果表明:重掺杂多晶硅纳米薄膜具有良好的温度特性,电阻率温度系数可达到1×10-4～3×10-4/℃的水平。 |
| 关 键 词： | 多晶硅纳米薄膜 电学特性 掺杂浓度 膜厚 |
Experiment study on electrical properties of poly-Silicon nanofilms |
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| LIU Xiao-wei,LI Jin-feng,CHUAI Rong-yan,SHI Chang-zhi,LU Xue-bin,WU Ya-jing. Experiment study on electrical properties of poly-Silicon nanofilms[J]. Transducer and Microsystem Technology, 2008, 27(8) | |
| Authors: | LIU Xiao-wei LI Jin-feng CHUAI Rong-yan SHI Chang-zhi LU Xue-bin WU Ya-jing |
| Abstract: | The polysilicon nano-films with thicknesses from 60~250nm are deposited by LPCVD to investigate the influence of thickness and doping concentration on the electrical properties of polysilicon nano-films.Combined with the SEM pictures of the films,the influence is analyzed theoretically based on the tested results of resistivity and temperature coefficient of resistivity.The results indicate that the heavy doped polysilicon nanofilms have better temperature characteristics,and their temperature coefficient of resistivity has a low value at 1×10-4~3×10-4/℃. |
| Keywords: | polysilicon nano-films electrical properties doping concentration film thicknesses |
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