Reverse short channel effects in high-k gated nMOSFETs |
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| Authors: | J-P Han SM Koo EM Vogel EP Gusev C D&#x;Emic CA Richter JS Suehle |
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| Affiliation: | aNational Institute of Standards and Technology (NIST), Semiconductor Electronics Division, Gaithersburg, MD 20899, United States;bIBM, T.J. Watson Research Center, Yorktown Heights, NY, United States |
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| Abstract: | Anomalous threshold voltage roll-up behavior, commonly referred as reverse short channel effect (RSCE), has been observed in high-k (HfO2 on SiON buffer, Al2O3 on SiON buffer) gated submicron nMOSFETs, while the SiO2 or SiON control samples show normal short channel effect (SCE) behavior. The possible causes such as inhomogeneous channel doping profile and gate oxide thickness variation near S/D ends have been ruled out. The results indicate that interface trap density that dependents on channel length is the main cause of the RSCE observed here. In addition, oxide charge also plays a role. |
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