Ultra-broad-band GaAs monolithic direct-coupled feedback amplifiers

GaAs monolithic direct-coupled amplifiers with load resistor and feedback resistor have been developed. The fabricated amplifier using the self-aligned implantation for n⁺-layer technology (SAINT) FET's has a 10-dB gain, a 7.2-dB noise figure, and input VSWR less than 2.0 over the frequency range from dc to 4 GHz.