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Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD |
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| Authors: | M Dubosc S Casimirius C Cardinaud J-L Duvail T Minéa J Torres |
| Affiliation: | a Université de Nantes, IMN, UMR CNRS 6502, 2 rue de la Houssinière, F-44322 Nantes, France b STMicroelectronics, 850 rue Jean Monnet F-38920 Crolles, France c Université Paris-Sud, LPGP, UMR CNRS 8578, Bat. 210, F-91405 Orsay, France |
| Abstract: | This article reports on carbon nanotubes (CNT) grown on TiN/Cu stacks by plasma enhanced chemical vapor deposition (PECVD) at 450 °C. Ni catalyst was deposited by two techniques - physical vapor deposition (PVD) and electrochemical deposition (ECD). First, the influence of the catalyst thickness and the catalyst deposition technique on grown CNTs is investigated. Second, the enhancement of the CNTs growth by use of electrodeposited catalysts is emphasized. |
| Keywords: | Carbon nanotubes (CNT) Plasma enhanced chemical vapor deposition (PECVD) Electrochemical deposition (ECD) |
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