Saturation measurements on electron spin resonance signals in amorphous silicon films

The dependence of the electron spin resonance signal intensity on the microwave magnetic field was investigated for amorphous silicon prepared by r.f. sputtering. The spin-lattice and the spin relaxation times T₁ and T₂ were determined by a new saturation method. As a result it is suggested that the electron spin resonance linewidth is determined by g-factor anisotropy, that T₂ is 10–100 times longer than the T¹₂ determined from the linewidth, that T₁ for samples annealed at below about 250°C is proportional to T^-1.9 and that most of the spins for samples annealed at above 400°C are probably due to dangling bonds in amorphous regions surrounding crystallites newly produced in the process of crystallization.