The use of novel PtSi thin film structures in preferential sputtering measurements

The yields of silicon and platinum from the argon sputtering of PtSi films were measured by Rutherford backscattering techniques. Novel thin film structures of Al₂O₃ (substrate)/W/PtSi were employed to facilitate the measurements. Before steady state was reached, more silicon than platinum was sputtered off, in good agreement with platinum enrichment measurements in the sputtered samples. At steady state the silicon and platinum sputtering yields were equal.