| Abstract: | Mg_(0.2)Zn_(0.8)O(MZO)/La_(0.67)Ca_(0.33)MnO(LCMO) heterostructure was deposited on p~+-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p~+-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p~+-Si devices may be a potential and multilevel candidate for nonvolatile memory application. |
