| 基于集总参数法的IGBT模块温度预测模型 |
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| 引用本文： | 魏克新,杜明星. 基于集总参数法的IGBT模块温度预测模型[J]. 电工技术学报, 2011, 0(12): 79-84 |
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| 作者姓名： | 魏克新 杜明星 |
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| 作者单位： | 天津大学电气与自动化工程学院;天津市复杂系统控制理论及应用重点实验室 |
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| 基金项目： | 国家自然科学基金(50977063);国家863计划(2008AA11A145);天津市科技支撑计划重点(09ZCKFGX01800)资助项目 |
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| 摘 要： | 从IGBT模块的内部结构和故障机理分析,得到影响IGBT模块可靠性的主要因素是温度的结论,而IGBT模块各层的温度是很难用实验的方法测取的。为了解决这一问题,在分析IGBT模块内部导热机理的基础上,利用瞬时非稳态导热的集总参数法建立热网络模型,并给出热损耗值、等效热阻、等效热容的提取方法。通过与制造商提供的IGBT模块结温实验数据、实测的底板温度和有限元模型相比较,热网络模型温度预测误差小于5%。
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| 关 键 词： | 绝缘栅极双极晶体管 热网络模型 集总参数法 结温 |
Temperature Prediction Model of IGBT Modules Based on Lumped Parameters Method |
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| Wei Kexin,Du Mingxing. Temperature Prediction Model of IGBT Modules Based on Lumped Parameters Method[J]. Transactions of China Electrotechnical Society, 2011, 0(12): 79-84 |
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| Authors: | Wei Kexin Du Mingxing |
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| Affiliation: | 1,2(1.Tianjin University Tianjin 300072 China 2.Tianjin Key Lab of Control Theory and Applications in Complicated System Tianjin 300384 China) |
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| Abstract: | Temperature of insulated gate bipolar transistor(IGBT) modules is a main influence factor of reliability,which is very difficult to measure.In order to solve this problem,interior heat conduction mechanism is analyzed.Then thermal network model of IGBT modules is constructed by employing lumped parameters method of instantaneous unsteady heat conduction.Parameters extraction methods of equivalent thermal resistance,equivalent thermal capacitance and heat losses are preferred.The paper gives experimental and simulated temperature curves,which datum from thermal network model,technical documents,base-plate measurement and finite element model.Result show that thermal network model is validated. |
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| Keywords: | Insulated gate bipolar transistor(IGBT) thermal network model lumped parameters method junction temperature |
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