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| SiO_2对ZnO压敏电阻器性能的影响 | |
| 引用本文： | 陈洪存 陈玲. SiO_2对ZnO压敏电阻器性能的影响[J]. 电子元件与材料, 1994, 13(4): 36-39 |
| 作者姓名： | 陈洪存 陈玲 |
| 作者单位： | 山东大学 |
| 摘 要： | 实验研究了ＳｉＯ２对ＺｎＯ压敏电阻器性能的影响，在ＺｎＯ陶瓷中，添加适量的ＳｉＯ２可以提高压敏电阻器的α值和电压梯度，降低漏泄电流，提高通流量，能够制造出性能优异的ＺｎＯ压敏电阻器。 |
| 关 键 词： | α值，电压梯度，漏泄电流，通流量，ZnO压敏电阻器 |
Effect of SiO_2 on the Performance of ZnO Varistors |
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| Chen Hongcun,Chen Ling,Xiao Mingshan. Effect of SiO_2 on the Performance of ZnO Varistors[J]. Electronic Components & Materials, 1994, 13(4): 36-39 | |
| Authors: | Chen Hongcun Chen Ling Xiao Mingshan |
| Affiliation: | Chen Hongcun;Chen Ling;Xiao Mingshan |
| Abstract: | Effect of SiO2 on the performance of ZnO varistors is researched experimentally. Adding a appropriate amount of SiO2 to ZnO ceramics leads to incrcase a value and voltage gradient of the varistor, to decrease leakage current and to raise withstanding surge current, that results in making ZnO varistors with excellent performance. |
| Keywords: | a value voltage gradient leakage current withstanding surge current ZnO varistor |
| 本文献已被 CNKI 维普 等数据库收录！ | |