| ZrOxNy薄膜的制备与低温电输运特性研究 |
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| 引用本文： | 孙晓敏,柏欣博,陈赋聪,黄荣进,王维,袁洁,金魁,李来风.ZrOxNy薄膜的制备与低温电输运特性研究[J].低温工程,2022(1):31-35. |
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| 作者姓名： | 孙晓敏 柏欣博 陈赋聪 黄荣进 王维 袁洁 金魁 李来风 |
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| 作者单位： | 中国科学院理化技术研究所低温工程学重点实验室 北京 100190;中国科学院大学材料科学与光电技术学院 北京100049,中国科学院物理研究所北京凝聚态物理国家研究中心 北京100190;中国科学院大学物理科学学院 北京100049,松山湖材料实验室 东莞523808,中国科学院物理研究所北京凝聚态物理国家研究中心 北京100190;中国科学院大学物理科学学院 北京100049;松山湖材料实验室 东莞523808 |
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| 基金项目： | 广东省重点领域研究发展计划(2020B0101340002)；;国家自然科学基金(52071223)； |
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| 摘 要： | 针对于测温应用中对低温温度计的性能需求,为了获得灵敏度高和测温区间宽的氮氧化锆(ZrOxNy)电阻温度传感薄膜,系统研究了溅射气氛中O2流量对ZrOxNy薄膜结构和低温电输运行为的影响.采用射频反应磁控溅射工艺,通过精细调整溅射沉积过程中的O2流量在Al2O3基片上生长了系列ZrOxNy薄膜,测定了薄膜的晶体结构、形貌...
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| 关 键 词： | 氮氧化锆薄膜 低温电输运 电阻温度系数 |
Study on preparation of ZrOxNyfilm and its low temperature electrical transport characteristics |
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| Sun Xiaomin,Bai Xinbo,Chen Fucong,Huang Rongjin,Wang Wei,Yuan Jie,Jin Kui,Li Laifeng.Study on preparation of ZrOxNyfilm and its low temperature electrical transport characteristics[J].Cryogenics,2022(1):31-35. |
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| Authors: | Sun Xiaomin Bai Xinbo Chen Fucong Huang Rongjin Wang Wei Yuan Jie Jin Kui Li Laifeng |
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| Affiliation: | (Key Laboratory of Cryogenic Engineering,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190,China;College of Materials Science and Opto-Electronic,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;Songshan Lake Materials Laboratory,Dongguan,Guangdong 523808,China) |
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| Abstract: | Aiming at the performance requirements of low temperature thermometers in temperature measurement applications,in order to obtain ZrOxNyresistance temperature sensing film with high sensitivity and wide temperature measurement range,the effect of O2flow rate on ZrOxNyfilms’structure and low temperature electrical transport behavior in sputtering atmosphere was systematically studied.A series of ZrOxNyfilms were grown on Al2O3substrate by rfreactive magnetron sputtering,and the crystal structure,morphology and low temperature electrical trans-port characteristics of the films were measured.The results show that with the increase of O2flow rate(0-0.24×1.6667×10-8m3/s),ZrOxNyfilm changes from single crystal ZrN(002)phase to ZrN and ZrO2phase,and the low temperature electrical transport behavior changes from semi-conductor-superconducting to semiconductor-insulating properties.The resistivity varies in the range of 103-108μΩ·cm.Both the absolute value of the sensitivity and the temperature coeffi-cient of resistance(|S|,|TCR|)of the film are positively correlated with the O2flow rate of the growing atmosphere,and high|S|and|TCR|are reached at an O2flow rate of 0.24×1.6667×10-8m3/s.The significant effect of O2flow rate on the low temperature electrical transport behav-ior of thin film in growing atmosphere provides a new idea for optimizing the performance of ZrOxNylow temperature thermometer. |
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| Keywords: | zirconium oxynitride film low temperature electrical transport resistance temper-ature coefficient |
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