脉冲偏压下电弧离子镀等离子体负载的等效电路模型及其定量表征

为了解决电弧离子镀(AIP)工艺中脉冲偏压电源与AIP等离子体负载间的匹配问题,结合脉冲偏压下AIP工艺实验,运用等离子体鞘层理论、电路理论和仿真模拟技术,得到AIP等离子体负载本质上是由鞘层引起的容性负载,在电路中可以等效为电容和电阻相并联的单元;根据AIP等离子体鞘层演化的特性,将AIP等离子体负载的等效电容表征为与时间无关而只与脉冲偏压幅度和等离子体相关参数有关的量,AIP等离子体负载的等效电阻,可以在直流偏压下通过测量与脉冲偏压幅值对应的AIP等离子体负载电流来确定.经验证,本文建立的AIP等离子体负载的等效电路模型及其定量表征是有效性的.

Equivalent circuit model and quantitative indication of the plasma load of arc ion plating with pulsed-bias voltage

This paper aims to solve the matching between pulsed-bias voltage and plasma load of the arc ion plating(AIP) process.The AIP process experiments,the analysis with plasma sheath as well as circuit theories and the simulation present that the AIP plasma load is capacitive owing the existence of the plasma sheath,which equals to a parallel unit of a capacitor and a resistor in the circuit.According to the evolution characteristic of AIP plasma sheath,the equivalent capacitor of AIP plasma load presents a parameter independent of time and only relating to the magnitude of pulsed-bias voltage and plasma parameters,and the equivalent resistor can be gained by measuring the pulsed bias-voltage magnitude and the current of AIP plasma load.It is demonstrated that the equivalent circuit model and quantitative indication of the AIP load are effective.