Ultradense GaN nanopillar and nanopore arrays by self-assembly nanopatterning |
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Authors: | N A Kouklin J Liang |
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Affiliation: | (1) Department of Electrical Engineering and Computer Science, University of Wisconsin-Milwaukee, Milwaukee, WI;(2) Department of Mechanical Engineering, Worcester Polytechnic University, Worcester, MA |
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Abstract: | We report on the details of controlled fabrication of highly crystalline gallium nitride (GaN) two-dimensional highly periodic
ultradense nanopore and nanopillar arrays by self-assembly nanopatterning. Nanopore synthesis relies on the use of anodized
alumina oxide template as a mask for dry etching of GaN top surface using chlorine gas. The inverse patterning is accomplished
by site-selective deposition of metal nanodot array by e-beam evaporation of Ni through the pores of the template; after which
the template is removed and dry etching is performed. The formed patterns demonstrate an excellent hexagonal order and uniformity
according to fast Fourier transformation performed. The presented approach is robust, highly reproducible, and technically
undemanding. Moreover, unreduced crystallinity of the produced nanopillars and nanopores was confirmed with Raman measurements,
which suggests their possible use as future substrates for engineering advanced nano-optoelectronic devices and sensors. |
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Keywords: | GaN array patterning |
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