Anomalous phase formation during annealing of La2O3 thin films deposited by ion beam assisted electron beam evaporation

The fifty seven nm thick La₂O₃ thin films were deposited on Si (100) substrates. After deposition, the amorphones thin films, were amorphous, were annealed at 750 and 900 °C for 1 h. It was found that their amorphous structure had been crystallized to hexagonal and cubic structures, respectively. The phase formation of the La₂O₃ thin films was anomalous at higher annealing temperatures. The theory of heterogeneous nucleation was used to interpret the anomalous phase formation of La₂O₃ films. To investigate the effects of the phase structure on these properties, Refractive indexes and dielectric constants of different structures of La₂O₃ films were measured.