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单根氧化锌纳米带/Au电极体系I-V特性的测量
引用本文:李萌,孙连峰,乔利杰.单根氧化锌纳米带/Au电极体系I-V特性的测量[J].电子显微学报,2006,25(4):320-323.
作者姓名:李萌  孙连峰  乔利杰
作者单位:1. 北京科技大学材料物理系,北京,100083
2. 国家纳米科学中心,北京,100080
摘    要:利用电子束刻蚀和真空蒸镀法,在单要氧化锌纳米带和SiO2/Si片上,制备了金纳米电极,采用四端法对氧化锌带的电流-电压(I-V)特性进行测量。实验发展氧化锌纳米带/金电极组成的体系存在三种完全不同的I-V特性曲线,分别为对应于较淖电阻的非对称阀值型曲线以及电阻较大的整流型和线性对称曲线,我们认为这主要是由于氧化锌纳米带和电极的接触情况不同所造成的。测量表明器件在不同环境下(空气和真空)具有不同的I-V特性,表面在当测量环境由空气变为真空时,前一类的I-V特性变化不大,而后一类由整流型变为线性对称型。

关 键 词:ZnO纳米带  肖特基势垒  接触电阻  界面态密度
文章编号:1000-6281(2006)04-0320-04
收稿时间:2006-04-16
修稿时间:2006-04-162006-05-30

Current-voltage characteristics of single zinc oxide nanobelt/gold electrodes system
LI Meng,SUN Lian-feng,QIAO Li-jie.Current-voltage characteristics of single zinc oxide nanobelt/gold electrodes system[J].Journal of Chinese Electron Microscopy Society,2006,25(4):320-323.
Authors:LI Meng  SUN Lian-feng  QIAO Li-jie
Affiliation:1. Department of materials Physics, University of Science and Technology Beijing, Beijing 100083; 2 National Center for Nanoscience and Technology, Beijing 100080, China
Abstract:E-beam lithography and vacuum evaporating methods were used to form four gold electrodes on single ZnO nanoblt and SiO_2/Si wafer.Four terminal electrical transport measurements were conducted on semiconducting nanobelt and three distinct I-V characteristics were observed.Deciding to metal-semiconductor(MS) contact,asymmetric valve current type curve was corresponding to a much lower MS contact resistance,and the curve did not change largely under ambient and vacuum testing condition;at larger contact resistance,almost rectifying and almost linear curves are observed which was corresponding to ambient and vacuum condition respectively.It appeared that the adsorption of oxygen on ZnO naobelt/Au electrodes system played a key role to the semiconducting nanobelt.
Keywords:ZnO nanobeh  schottky barriers  contact resistance  interface state density
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