Synergistic optimization of electrical-thermal properties of dual vacancy Bi1?x-yPbyCu1?xSeO by improving mobility and reducing lattice thermal conductivity |
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| Affiliation: | 1. School of Metallurgical Engineering, Anhui University of Technology, Ma’anshan 243032, China;2. School of Chemistry and Resources Engineering, Honghe University, Mengzi 661199, China;3. State Key Laboratory of Vanadium and Titanium Resources Comprehensive Utilization, Panzhihua 617000, China;4. Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230041, China;5. The State key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China;6. Bengbu Institute of Metrology, Anmin Road 100, Economic Development Zone, Bengbu 233017, China;7. College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China;1. CEA, DES, ISEC, DMRC, Univ Montpellier, Marcoule France;2. ORANO, Chusclan, France;1. School of Mathematical and Physical Sciences, Wuhan Textile University, Wuhan 430200, PR China;2. School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, PR China;3. Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Wenzhou 325035, PR China;1. Guangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, College of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China;2. School of Mechanical Engineering, Guilin University of Aerospace Technology, Guilin 541004, China;3. College of Science, Guilin University of Technology, Guilin 541004, China;1. Joining and Welding Research Institute, Osaka University, Osaka 5670047, Japan;2. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Institute of Functional Materials, Donghua University, Shanghai 201620, China |
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| Abstract: | We fabricate Bi1?x-yPbyCu1?xSeO (x = 0, 0.03, 0.06, y = 0, 0.10) samples via 4 min-microwave synthesis combined with 5 min-spark plasma sintering. The phase composition, microstructure, valence, and electrical and thermal transport properties of the samples are investigated at 298–873 K. Pb doping provides impurity carriers and increases the concentration to 0.9–3.0 × 1020 cm-³ . Bi and Cu vacancy could provide a carrier transport channel to reduce carrier scattering probability, leading to improved mobility. Twin crystals, stacking faults, and grain boundary segregation are observed in Bi0.87Pb0.10Cu0.97SeO on scanning transmission electron microscopy. Bi and Cu vacancy increase the sample point defects in Pb-doped or undoped samples which results in a decrease in lattice thermal conductivity. The lattice thermal conductivity of Bi0.87Pb0.10Cu0.97SeO is decreased to an extremely low value of 0.13 Wm?1 K?1 and a maximum ZT value of 1.09 is achieved at 873 K. |
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| Keywords: | BiCuSeO oxyselenide Microwave synthesis Mobility Lattice thermal conductivity Thermoelectric figure of merit |
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