Improving specific stiffness of silicon carbide ceramics by adding boron carbide |
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| Affiliation: | 1. Functional Ceramics Laboratory, Department of Materials Science and Engineering, The University of Seoul, Seoul 02504, Republic of Korea;2. Agency for Defense Development (ADD), Daejeon 34186, Republic of Korea;1. Siemens Energy, Inc., 5101 Westinghouse Blvd.Charlotte, NC 28273, USA;2. Siemens Energy AG, Freilagerstrasse 38, 8047 Zürich, Switzerland;3. Siemens Energy, Inc., 261 Lyman Road, Casselberry, FL 32707, USA;1. Peter Grünberg Institute, PGI-7 – Electronic Materials, Forschungszentrum Jülich GmbH & Jülich Aachen Research Alliance of Fundamentals on Future Information Technology (JARA-FIT), Jülich, Germany;2. Department of Materials Engineering, National Pingtung University of Science and Technology, Pingtung, Taiwan, ROC;3. Murata Manufacturing Co., Ltd., Kyoto, Japan;4. Institute of Energy and Climate Research, IEK-1 – Materials Synthesis and Processing, Forschungszentrum Jülich GmbH, Jülich, Germany;5. Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen, Aachen, Germany;1. Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China;2. State Key Laboratory of Green Building Materials, China Building Materials Academy, Beijing 100000, China |
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| Abstract: | A strategy for improving the specific stiffness of silicon carbide (SiC) ceramics by adding B4C was developed. The addition of B4C is effective because (1) the mass density of B4C is lower than that of SiC, (2) its Young’s modulus is higher than that of SiC, and (3) B4C is an effective additive for sintering SiC ceramics. Specifically, the specific stiffness of SiC ceramics increased from ~142 × 106 m2?s?2 to ~153 × 106 m2?s?2 when the B4C content was increased from 0.7 wt% to 25 wt%. The strength of the SiC ceramics was maximal with the incorporation of 10 wt% B4C (755 MPa), and the thermal conductivity decreased linearly from ~183 to ~81 W?m?1?K?1 when the B4C content was increased from 0.7 to 30 wt%. The flexural strength and thermal conductivity of the developed SiC ceramic containing 25 wt% B4C were ~690 MPa and ~95 W?m?1?K?1, respectively. |
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| Keywords: | Silicon carbide Specific stiffness Boron carbide Flexural strength Thermal conductivity |
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