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高导热氮化硅陶瓷的快速制备和性能控制
引用本文:张景贤,席红安,段于森,刘宁,马瑞欣,江东亮,杨建,李晓云,丘泰.高导热氮化硅陶瓷的快速制备和性能控制[J].真空电子技术,2020(1):37-40,47.
作者姓名:张景贤  席红安  段于森  刘宁  马瑞欣  江东亮  杨建  李晓云  丘泰
作者单位:中国科学院上海硅酸盐研究所结构陶瓷与复合材料工程研究中心;中国科学院大学材料与光电研究中心;佛山市中国科学院上海硅酸盐研究所陶瓷研发中心;南京工业大学材料科学与工程学院
基金项目:科技部重点研发计划项目(2016YFB0700300);国家自然科学基金项目(51572277,51702340);上海市科学技术委员会项目(17YF1428800、17ZR1434800);中国科学院上海硅酸盐研究所高性能陶瓷与超微结构国家重点实验室项目.
摘    要:氮化硅陶瓷力学性能优异,理论热导率高,是大功率电力电子器件的关键热管理材料。但是,高导热氮化硅陶瓷烧结温度高、保温时间长,因此制备成本居高不下,对于产业化应用不利。本研究提出了一种快速制备高导热氮化硅陶瓷的方案。以Y2O3-MgO-C作为烧结助剂,以高纯硅粉作为起始原料,通过流延成型和硅粉氮化制备素坯,在1900℃、0.6MPa保温2h制备出高导热氮化硅陶瓷。研究了C的添加量对于氮化硅陶瓷的致密化、晶相、微结构、力学性能以及热导率的影响规律。最终制备的氮化硅陶瓷密度可以达到99%以上,热导率达到98W/m·K。

关 键 词:氮化硅基片  流延成型  硅粉氮化  无压烧结

Rapid Preparation and Performance Control of Silicon Nitride Ceramics with High Thermal Conductivity
ZHANG Jing-xian,XI Hong-an,DUAN Yu-sen,LIU Ning,MA Rui-xin,JIANG Dong-liang,YANG Jian,LI Xiao-yun,QIU Tai.Rapid Preparation and Performance Control of Silicon Nitride Ceramics with High Thermal Conductivity[J].Vacuum Electronics,2020(1):37-40,47.
Authors:ZHANG Jing-xian  XI Hong-an  DUAN Yu-sen  LIU Ning  MA Rui-xin  JIANG Dong-liang  YANG Jian  LI Xiao-yun  QIU Tai
Affiliation:(Structural Ceramics Engineering Research Center,Shanghai Institute of Ceramics,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Foshan Research and Development Center for Ceramics,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Foshan 528000,China;School of materials science and engineering,Nanjing University of technology,Nanjing 210009,China)
Abstract:Si3N4 ceramics are prospective substrate candidates for power electron devices because of the excellent mechanical properties and high theoretical thermal conductivity.However,the development of high thermal conductivity Si3N4 is quite difficult,because the high sintering temperature and long holding time under N2 pressure lead to high production cost,which is not conductive to industrial applications.In this paper,a relative fast preparation process was proposed using Y2O3-MgO-C as the sintering additive and silicon powder as the starting material.High thermal conductivity Si3N4 ceramic was prepared through tape casting,nitridation and gas pressure sintering at 1900℃,0.6 MPa with 2 hholding.The influences of carbon addition on the sintering behavior,phase,microstructure,mechanical properties and thermal conductivity of Si3N4 were studied.Finally Si3N4 ceramics with the relative density of 99% and the thermal conductivity of 98 W/m K were obtained.
Keywords:Silicon nitride circuit substrate  Tape casting  Silicon powder nitridation  Pressureless sintering
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