Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers |
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Authors: | Z Gu J H Edgar S A Speakman D Blom J Perrin J Chaudhuri |
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Affiliation: | (1) Department of Chemical Engineering, Kansas State University, 66506 Manhattan, KS;(2) High Temperature Materials Laboratory, Oak Ridge National Laboratory, 37831-6064 Oak Ridge, TN;(3) Department of Mechanical Engineering, Texas Tech University, 79409 Lubbock, TX |
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Abstract: | Two types of aluminum nitride (AlN) samples were oxidized in flowing oxygen between 900°C and 1150°C for up to 6 h—highly
(0001) textured polycrystalline AlN wafers and low defect density AlN single crystals. The N-face consistently oxidized at
a faster rate than the Al-face. At 900°C and 1000°C after 6 h, the oxide was 15% thicker on the N-face than on the Al-face
of polycrystalline AlN. At 1100°C and 1150°C, the oxide was only 5% thicker on the N-face, as the rate-limiting step changed
from kinetically-controlled to diffusion-controlled with the oxide thickness. A linear parabolic model was established for
the thermal oxidation of polycrystalline AlN on both the Al- and N-face. Transmission electron microscopy (TEM) confirmed
the formation of a thicker crystalline oxide film on the N-face than on the Al-face, and established the crystallographic
relationship between the oxide film and substrate. The oxidation of high-quality AlN single crystals resulted in a more uniform
colored oxide layer compared to polycrystalline AlN. The aluminum oxide layer was crystalline with a rough AlN/oxide interface.
The orientation relationship between AlN and Al2O3 was (0001) AlN//(
) Al2O3 and (
) AlN//(
) Al2O3. |
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Keywords: | Thermal oxidation aluminum nitride (AlN) polycrystalline single crystalline |
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