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GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography |
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| Authors: | SANG Wei-hu LIN Lu WANG Long MIN Jia-hu ZHU Jian-jun and WANG Min-rui |
| Affiliation: | School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, China;School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China |
| Abstract: | Nano-hole patterned sapphire substrates (NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography (LIL) combined with reactive ion etching (RIE) and inductively coupled plasma (ICP) techniques. Gallium nitride (GaN)-based light emitting diode (LED) structure was grown on NHPSS by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) measurement was conducted to compare the luminescence efficiency of the GaN-based LED structure grown on NHPSS (NHPSS-LED) and that on unpatterned sapphire substrates (UPSS-LED). Electroluminescence (EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 mA. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of GaN epilayer and light extraction efficiency of LEDs at the same time. |
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