Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy

Molecular beam epitaxy growth of an In_xGa_(1-x)As/GaAs quantum well(QW) structure(x equals to 0.17 or 0.3) on offcut(100) Ge substrate has been investigated.The samples were characterized by atomic force microscopy,photoluminescence(PL),and high resolution transmission electron microscopy.High temperature annealing of the Ge substrate is necessary to grow GaAs buffer layer without anti-phase domains.During the subsequent growth of the GaAs buffer layer and an In_xGa_(1-x)As/GaAs QW structure,temperature pl...