A CMOS variable gain LNA for UWB receivers |
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Authors: | Chen Feihua Li Lingyun Duo Xinzhong Tian Tong Sun Xiaowei |
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Affiliation: | 1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China 2. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 3. Semiconductor Manufacturing International Corporation, Shanghai 201203, China |
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Abstract: | ACMOS variable gain low noise amplifier (LNA) is presented for 4.2-4.8 GHz ultra-wideband application in accordance with Chinese standard. The design method for the widcband input matching is presented and the low noise performance of the LNA is illustrated. A three-bit digital programmable gain control circuit is exploited to achieve variable gain. The design was implemented in 0.13-μm RF CMOS process, and the die occupies an area of 0.9 mm2 with ESD pads. Totally the circuit draws 18 mA DC current from 1.2 V DC supply, the LNA exhibits minimum noise figure of 2.3 dB, S(1, 1) less than -9 dB and S(2, 2) less than -10 dB. The maximum and the minimum power gains are 28.5 dB and 16 dB respectively. The tuning step of the gain is about 4 dB with four steps in all. Also the input 1 dB compression point is -10 dBm and input third order intercept point (IIP3) is-2 dBm. |
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Keywords: | low noise amplifier ultra-wideband variable gain RF CMOS |
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