成像干涉光刻技术与离轴照明光刻技术的对比分析

作为分辨率增强技术(RET)之一，离轴照明技术（OAI）通过调整照明方式，不但能提高分辨率还能很好地改善焦深．成像干涉光刻技术(IIL)利用多次曝光分别记录物体空间频率的不同部分，极大地提高了成像质量，其中大角度倾斜照明是对OAI的扩展．从成像原理和频域范围的角度对IIL和OAI进行了理论研究、计算模拟和对比分析．结果表明，在同样条件下，IIL相对于OAI可更好地分辨细微特征．

Comparison Between Imaging Interferometric Lithography and Off-Axis Illumination Lithography

As a resolution enhancement technique(RET),off-axis illumination (OAI) can enhance resolution and improve depth of focus (DOF) through adjusting illumination.Imaging interferometric lithography (IIL) uses multiple exposure to record different portions of the spatial frequency space of mask and greatly increases resolution.The large angle oblique illumination in IIL is an extension of OAI.A comparison of IIL with OAI in theory and frequency domain is given.The theoretical analysis and simulation results show that IIL has better resolution than OAI when under the same condition.