| 基于石英基片的W波段高输出功率肖特基二极管倍频器 |
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| 引用本文： | 姚常飞,周明,罗运生,李姣,许从海.基于石英基片的W波段高输出功率肖特基二极管倍频器[J].半导体学报,2013,34(12):125004-5. |
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| 作者姓名： | 姚常飞 周明 罗运生 李姣 许从海 |
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| 摘 要： | W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.
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| 关 键 词： | 肖特基二极管 高输出功率 石英衬底 W波段 倍增器 无源网络 平面波导 倍频电路 |
| 收稿时间： | 2/5/2013 12:00:00 AM |
W-band high output power Schottky diode doublers with quartz substrate |
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| Yao Changfei,Zhou Ming,Luo Yunsheng,Li Jiao and Xu Conghai.W-band high output power Schottky diode doublers with quartz substrate[J].Chinese Journal of Semiconductors,2013,34(12):125004-5. |
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| Authors: | Yao Changfei Zhou Ming Luo Yunsheng Li Jiao and Xu Conghai |
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| Affiliation: | Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China;Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China |
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| Abstract: | W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schottky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz. |
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| Keywords: | high output power|frequency doubler|planar Schottky diode|efficiency |
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