| 用飞秒激光触发GaAs光电导体产生THz电磁波的研究 |
| |
| 引用本文： | 施卫,张显斌,贾婉丽,李孟霞,许景周,张希成.用飞秒激光触发GaAs光电导体产生THz电磁波的研究[J].半导体学报,2004,25(12):1735-1738. |
| |
| 作者姓名： | 施卫 张显斌 贾婉丽 李孟霞 许景周 张希成 |
| |
| 作者单位： | 西安理工大学应用物理系，西安理工大学应用物理系，西安理工大学应用物理系，西安理工大学应用物理系，美国伦斯勒理工学院应用物理与天文系，美国伦斯勒理工学院应用物理与天文系 西安710048，西安710048，西安710048，西安710048，纽约州特洛伊市，1218023590，美国，纽约州特洛伊市，1218023590，美国 |
| |
| 摘 要： | 报道了用半绝缘GaAs材料研制的光电导偶极天线在飞秒激光脉冲触发下辐射THz电磁波的实验结果.GaAs光电导偶极芯片的两个欧姆接触电极间隙为3mm,采用Si3N4薄膜绝缘保护,在540V直流偏置下被波长800nm,脉宽14fs,重复频率75MHz,平均功率130mW的飞秒激光脉冲触发时产生THz电磁波.用电光取样测量得到了THz电磁脉冲的时域波形和频谱分布.THz电磁波的辐射峰值位于0.5THz左右,频谱宽度大于2THz,脉冲宽度约为1ps.
|
| 关 键 词： | GaAs光电导偶极天线 太赫兹电磁波 皮秒电脉冲 |
| 文章编号： | 0253-4177(2004)12-1735-04 |
| 修稿时间： | 2004年8月8日 |
Investigation on Terahertz Generation with GaAs Photoconductor Triggered by Femo-Second Laser Pulse |
| |
| Shi Wei,Zhang Xianbin,Jia Wanli,Li Mengxia,Xu Jingzhou and Zhang Xicheng.Investigation on Terahertz Generation with GaAs Photoconductor Triggered by Femo-Second Laser Pulse[J].Chinese Journal of Semiconductors,2004,25(12):1735-1738. |
| |
| Authors: | Shi Wei Zhang Xianbin Jia Wanli Li Mengxia Xu Jingzhou and Zhang Xicheng |
| |
| Affiliation: | Shi Wei1,Zhang Xianbin1,Jia Wanli1,Li Mengxia1,Xu Jingzhou2 and Zhang Xicheng2 |
| |
| Abstract: | Experiments of terahertz generation with semi-insulating GaAs photoconductive dipole antenna triggered by femto-second laser pulses are reported.The switch is insulated by Si 3N 4 film and the gap of two electrodes is 3mm.When it is triggered by Ti-sapphire femo-second laser pulses with 130mW of average power,14fs of pulse duration,82 of MHz repetition rate and operated at 540V of biased electric voltage,both terahertz waveform and about 1ps width of the THz electric pulse is observed from the test of electro-optic sampling.The frequency spectrum of the terahertz radiation ranges about 2THz,and its amplitude peaks are at roughly 0.5THz. |
| |
| Keywords: | GaAs photoconductive dipole antenna terahertz radiation picosecond electric pulse |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
