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Lattice-Matched InP-Based HEMTs with fT of 120GHz |
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| Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Journal of Semiconductors, 2005, In Press. Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Chin. J. Semicond., 2005, 26(3): 472.Export: BibTex EndNote | |
| Authors: | Chen Liqiang Zhang Haiying Yin Junjian Qian He Niu Jiebin |
| Abstract: | Lattice matched InP based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1 2V,and the maximum current density of 500mA/mm. |
| Keywords: | cutoff frequency high electron mobility transistors InAlAs/InGaAs InP |
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