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High voltage SOI LDMOS with a compound buried layer |
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| Authors: | Luo Xiaorong Hu Gangyi Zhou Kun Jiang Yongheng Wang Pei Wang Qi Luo Yinchun Zhang Bo and Li Zhaoji |
| Affiliation: | Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China;Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 China |
| Abstract: | |
| Keywords: | SOI electric field specific on-resistance breakdown voltage |
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