| 基于空间控制的ICP量子阱混杂技术 |
| |
| 引用本文： | 赵建宜,郭剑,黄晓东,周宁,刘文.基于空间控制的ICP量子阱混杂技术[J].半导体学报,2012,33(10):106001-4. |
| |
| 作者姓名： | 赵建宜 郭剑 黄晓东 周宁 刘文 |
| |
| 作者单位： | Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China;Accelink Technologies Company, Ltd, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China;Accelink Technologies Company, Ltd, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China;Accelink Technologies Company, Ltd, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China;Accelink Technologies Company, Ltd, Wuhan 430074, China |
| |
| 基金项目： | 国家重点基础研究发展计划（973计划）;国家高技术研究发展计划（863计划） |
| |
| 摘 要： | 本文提出了一种针对InP/InGaAsP材料,基于空间控制技术的ICP量子阱混杂方法。同一片晶片上带隙能量的偏移程度可以通过掩膜上图形的不同占空比灵活的控制。通过一组优化的参数包括ICP-RIE刻蚀深度,二氧化硅沉积厚度,退火过程等,一个样品上,同时实现了五个不同的蓝移,其中最大的蓝移量达到75nm。结果显示在单片集成器件特别是多带隙结构器件的制作中这是一种有效的方法。
|
| 关 键 词： | InGaAsP 量子阱混杂 带隙结构 空间控制 InP ICP CP技术 蚀刻深度 |
| 收稿时间： | 3/7/2012 10:15:42 AM |
Spatial control based quantum well intermixing in InP/InGaAsP structures using ICP |
| |
| Zhao Jianyi,Guo Jian,Huang Xiaodong,Zhou Ning and Liu Wen.Spatial control based quantum well intermixing in InP/InGaAsP structures using ICP[J].Chinese Journal of Semiconductors,2012,33(10):106001-4. |
| |
| Authors: | Zhao Jianyi Guo Jian Huang Xiaodong Zhou Ning and Liu Wen |
| |
| Affiliation: | Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, College of Optoelectronic Science and Engineering, Wuhan 430074, China |
| |
| Abstract: | This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology. The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios. With an optimal condition including ICP-RIE etching depth, SiO2 deposition, and RTA process, five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample. The result shows that our method is an effective way to fabricate monolithic integration devices, especially in multi-bandgap structures. |
| |
| Keywords: | inductively coupled plasma photonic integrated circuits quantum wells quantum well intermixing |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
