GaN转移电子器件的性能与基本设计

基于GaN转移电子器件最基本的工作模式--畴渡越时间模式，计算了GaN转移电子器件的理想最高振荡频率，得到该类型微波转移电子器件的最高振荡频率可达4.7THz，接近GaAs转移电子器件最高振荡频率（0.6THz）的8倍. 从理论上计算出GaN转移电子器件的理想最大输出功率，结果表明GaN转移电子器件在功率输出方面具有很大优势. 最后还讨论了GaN转移电子器件在畴渡越时间模式下，能够产生稳定Gunn振荡的两个基本条件，即电子浓度N与器件有源区长度L乘积要大于该器件的设计标准（(NL)0=6.3E12cm-2) 及有源区的掺杂浓度N要小于临界掺杂浓度Ncrit(3.2E17cm-3) . 本工作揭示出GaN转移电子器件在高频率和大功率输出方面都具有重要优势，作为大功率THz微波信号源将具有广阔的应用前景.

Performance and Design of GaN-Based Transferred-Electron Devices

Based on the basic transit-time domain operation mode of TEDs,we first calculated the ideal maximum oscillation frequency of GaN-based transferred-electron devices (TEDs),which can be as high as 4.7THz.This value is nearly 8 times as high as that of GaAs-based TEDs,which is about 0.6 THz.Next,we calculated the maximum output power of GaN-based TEDs indicating that GaN-based TEDs are promising for high microwave power applications.We also discussed the two critical conditions in GaN-based design for generating stable Gunn oscillations in transit-time domain mode.Our calculation indicates that the product of electron concentration and the length of active layer should be higher than a critical value of 6.3E12cm-2 ;and the doping lever of the active layer has to be smaller than a critical level of 3.2E17cm-3.This study suggests that GaN-based TEDs have significant advantages for high-frequency and high-power microwave generation,which are perspective for high-power THz signal source applications.