| 一种应用于6-9GHz UWB系统的低噪声CMOS射频前端设计 |
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| 引用本文： | 周锋,高亭,兰飞,李巍,李宁,任俊彦.一种应用于6-9GHz UWB系统的低噪声CMOS射频前端设计[J].半导体学报,2010,31(11):115009-5. |
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| 作者姓名： | 周锋 高亭 兰飞 李巍 李宁 任俊彦 |
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| 基金项目： | National Sci & Tech Major Projects of China under Grant numbers of 2009ZX03006-007-01, 2009ZX03007-001, 2009ZX03006-009, and National High Tech R&D (863) Program of China with grant number of 2009AA01Z261 |
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| 摘 要： | 本文介绍了一种应用于6-9 GHz超宽带系统的全集成差分CMOS射频前端电路设计。在该前端电路中应用了一种电阻负反馈形式的低噪声放大器和IQ两路合并结构的增益可变的折叠式正交混频器。芯片通过TSMC 0.13µm RF CMOS工艺流片，含ESD保护电路。经测试得该前端电路大电压增益为23~26dB，小电压增益为16~19dB；大增益下前端电路平均噪声系数为3.3-4.6dB，小增益下的带内输入三阶交调量(IIP3)为-12.6dBm。在1.2V电压下，消耗的总电流约为17mA。
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| 关 键 词： | 互补金属氧化物硅，超宽带，电阻负反馈低噪声放大器，折叠式正交混频器，噪声系数，线性度 |
| 收稿时间： | 5/8/2010 11:22:38 AM |
| 修稿时间： | 7/5/2010 9:50:43 AM |
A low noise CMOS RF front-end for UWB 6--9 GHz applications |
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| Zhou Feng,Gao Ting,Lan Fei,Li Wei,Li Ning and Ren Junyan.A low noise CMOS RF front-end for UWB 6--9 GHz applications[J].Chinese Journal of Semiconductors,2010,31(11):115009-5. |
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| Authors: | Zhou Feng Gao Ting Lan Fei Li Wei Li Ning and Ren Junyan |
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| Affiliation: | State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China;State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China;State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China;State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China;State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China;State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China |
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| Abstract: | |
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| Keywords: | CMOS Ultra-wideband (UWB) resistive feedback low noise amplifier (LNA) folded quadrature mixer noise figure linearity |
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