| A New Method to Investigate InGaAsP Single-Photon AvalancheDiodes Using a Digital Sampling Oscilloscope |
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| 作者姓名： | Liu Wei Yang Fuhu Wu Meng |
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| 作者单位： | 中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;中国科学院半导体研究所 超晶格国家重点实验室，北京 100083;中国科学院半导体研究所 超晶格国家重点实验室，北京 100083 |
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| 基金项目： | 国家基础研究重大项目基金 |
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| 摘 要： | 介绍了由带尾纤的InGaAs/InP雪崩光电二极管建立的近红外单光子探测系统. 使用带宽50GHz 的数字采样示波器，首次直观地展现了门模式（即盖革模式）工作状态下，单光子探测的模式和过程. 并且在波长分别为1310和1550nm的情况下进行了定量研究. 在1550nm，工作温度203K条件下，该探测器达到了暗计数概率2.4E-3每门，量子效率52%, 50kHz的门信号重复频率；在工作温度为238K时，相应参数分别为8.5E-3,43%和200kHz.
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| 关 键 词： | InGaAsP单光子雪崩二极管 50GHz数字采样示波器 门模式 |
| 文章编号： | 0253-4177(2006)10-1711-06 |
| 收稿时间： | 03 31 2006 12:00AM |
| 修稿时间： | 6/2/2006 10:14:44 AM |
A New Method to Investigate InGaAsP Single-Photon AvalancheDiodes Using a Digital Sampling Oscilloscope |
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| Liu Wei,Yang Fuhu,Wu Meng.A New Method to Investigate InGaAsP Single-Photon AvalancheDiodes Using a Digital Sampling Oscilloscope[J].Chinese Journal of Semiconductors,2006,27(10):1711-1716. |
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| Authors: | Liu Wei Yang Fuhua and Wu Meng |
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| Affiliation: | State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | A near-infrared single-photon detection system is established by using pigtailed InGaAs/InP avalanche photodiodes.With a 50GHz digital sampling oscilloscope,the function and process of gated-mode (Geiger-mode) single-photon detection are intuitionally demonstrated for the first time.The performance of the detector as a gated-mode single-photon counter at wavelengths of 1310 and 1550nm is investigated.At the operation temperature of 203K,a quantum efficiency of 52% with a dark count probability per gate of 2.4E-3,and a gate pulse repetition rate of 50kHz are obtained at 1550nm.The corresponding parameters are 43%,8.5E-3,and 200kHz at 238K. |
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| Keywords: | InGaAsP single-photon avalanche diode 50GHz digital sampling oscilloscope gated-mode |
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