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侧向注入的载流子注入型SOI光开关中的热效应分析V
引用本文:赵佳特,赵勇,王皖君,郝寅雷,周强,杨建义,王明华,江晓清.侧向注入的载流子注入型SOI光开关中的热效应分析V[J].半导体学报,2010,31(6):064009-5.
作者姓名:赵佳特  赵勇  王皖君  郝寅雷  周强  杨建义  王明华  江晓清
摘    要:根据热场方程,分析了侧向载流子注入pin结SOI脊波导器件中的热光效应影响,数值分析和实验现象表明,在该类电光子器件中,载流子注入产生的热光效应影响明显,尤其对于SOI材料的小截面脊波导结构。如1000微米调制长度的器件,在正常工作时,温升引起的折射率上升已占总的效应的1/8;同时提出了通过调整电极位置来进行散热的减小热光效应影响的方案。

关 键 词:热光效应  分析设备  脊波导  SOI  载波  冷却装置  载流子注入  折光指数
修稿时间:1/26/2010 4:10:31 PM

Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices
Zhao Jiate,Zhao Yong,Wang Wanjun,Hao Yinlei,Zhou Qiang,Yang Jianyi,Wang Minghua and Jiang Xiaoqing.Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices[J].Chinese Journal of Semiconductors,2010,31(6):064009-5.
Authors:Zhao Jiate  Zhao Yong  Wang Wanjun  Hao Yinlei  Zhou Qiang  Yang Jianyi  Wang Minghua and Jiang Xiaoqing
Affiliation:Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Abstract:
Keywords:plasma dispersion effect  SOI waveguide device  thermo-optic effect  silicon photonics
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