| Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter |
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| 作者姓名： | Su Shubing Liu Xunchun Liu Xinyu Yu Jinyong Wang Runmei Xu Anhuai Qi Ming |
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| 作者单位： | 中国科学院微电子研究所,北京 100029;中国科学院微电子研究所,北京 100030;中国科学院微电子研究所,北京 100031;中国科学院微电子研究所,北京 100032;中国科学院微电子研究所,北京 100033;中国科学院上海微系统与信息技术研究所，上海 200050;中国科学院上海微系统与信息技术研究所，上海 200050 |
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| 摘 要： | 研究了一种采用新的T型发射极技术的自对准InP/GaInAs单异质结双极晶体管.采用了U型发射极图形结构、选择性湿法腐蚀、LEU以及空气桥等技术,成功制作了U型发射极尺寸为2μm×12μm的器件.该器件的共射直流增益达到170,残余电压约为0.2V,膝点电压仅为0.5V,而击穿电压超过了2V.器件的截止频率达到85GHz,最大振荡频率为72GHz,这些特性使此类器件更适合于低压、低功耗及高频方面的应用.
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| 关 键 词： | 自对准发射极 磷化铟 单异质结双极晶体管 T型发射极 U型发射极图形 self-alignment emitter InP single heterojunction bipolar transistor T-shaped emitter U-shaped emitter layout 发射极 自对准 单异质结双极晶体管 性能 Performance Emitter applications InGaAs results good microwave performance cutoff frequency maximum oscillation breakdown voltage knee offset current gain |
| 文章编号： | 0253-4177(2006)03-0434-04 |
| 收稿时间： | 09 22 2005 12:00AM |
| 修稿时间： | 12 8 2005 12:00AM |
Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter |
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| Su Shubing,Liu Xunchun,Liu Xinyu,Yu Jinyong,Wang Runmei,Xu Anhuai,Qi Ming.Performance of a Self-Aligned InP/GaInAs SHBT with a Novel T-Shaped Emitter[J].Chinese Journal of Semiconductors,2006,27(3):434-437. |
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| Authors: | Su Shubing Liu Xunchun Liu Xinyu Yu Jinyong Wang Runmei Xu Anhuai and Qi Ming |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China |
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| Abstract: | |
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| Keywords: | self-alignment emitter InP single heterojunction bipolar transistor T-shaped emitter U-shaped emitter layout |
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