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一种宽带的InGaP/GaAs HBT 再生频率分频器
引用本文:张金灿,张玉明,吕红亮,张义门,刘敏,钟英辉,师政.一种宽带的InGaP/GaAs HBT 再生频率分频器[J].半导体学报,2014,35(7):075004-4.
作者姓名:张金灿  张玉明  吕红亮  张义门  刘敏  钟英辉  师政
基金项目:国家重点基础研究发展计划(973计划); 国家预研项目; 国家预研基金
摘    要:A dynamic divide-by-two regenerative GaP/GaAs heterojunction bipolar transistors (HBTs) frequency divider (RFD) is presented in a 60-GHz-fT Intechnology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm^2.

关 键 词:异质结双极晶体管  分频器  InGaP  GaAs  再生  宽带  技术  有源负载

A broadband regenerative frequency divider in InGaP/GaAs HBT technology
Zhang Jincan,Zhang Yuming,L&#; Hongliang,Zhang Yimen,Liu Min,Zhong Yinghui and Shi Zheng.A broadband regenerative frequency divider in InGaP/GaAs HBT technology[J].Chinese Journal of Semiconductors,2014,35(7):075004-4.
Authors:Zhang Jincan  Zhang Yuming  L&#; Hongliang  Zhang Yimen  Liu Min  Zhong Yinghui and Shi Zheng
Affiliation:School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Abstract:A dynamic divide-by-two regenerative frequency divider (RFD) is presented in a 60-GHz-fT InGaP/GaAs heterojunction bipolar transistors (HBTs) technology. To achieve high operation bandwidth, active loads instead of resistor loads are incorporated into the RFD. On-wafer measurement shows that the divider is operating from 10 GHz up to at least 40 GHz, limited by the available input frequency. The maximum operation frequency of the divider is found to be much higher than fT/2 of the transistor, and also the divider has excellent input sensitivity. The divider consumes 300.85 mW from 5 V supply and occupies an area of 0.47 × 0.22 mm2.
Keywords:regenerative frequency divider  InGaP/GaAs HBT  active loads  broadband
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